三菱功放模塊 RA07H3340M
產(chǎn)品詳情商家聯(lián)系電話：86-0755-83996702
該RA07H3340M是7-watt RF的MOSFET放大器模塊for 12.5-volt便攜式/ 330-運(yùn)作，在移動(dòng)無線電400-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒有門電壓(VGG進(jìn)排水=0V),只是一個(gè)很小的泄漏電流與輸入信號衰減的RF高達(dá)60 dB.輸出功率作為柵極和漏極電壓增加電流增加.隨著柵極電壓約2.5V（最低），輸出功率和漏目前的大幅增加.額定輸出功率變在3V（典型值）和3.5V（最大）提供.在VGG=3.5V,的典型柵極電流1 mA.該模塊是專為非線性調(diào)頻調(diào)制，但可能也可用于線性調(diào)制通過設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率。
特征
•增強(qiáng)型MOSFET晶體管IDD≅0@ VDD=12.5V, VGG=0V
•寬帶頻率范圍：330-400MHz
•低功耗控制電流IGG=1mA (typ)在VGG=3.5V
•模塊尺寸：30 x 10 x 5.4 mm
•線性操作有可能通過設(shè)置靜態(tài)漏電流同門電壓和輸出功率的控制輸入功率。
RA07H3340M： Silicon RF Power Semiconductors RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET TransistorsVDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• hT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANT
• RA07H3340M-101 is a RoHS compliance products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER：RA07H3340M-101
SUPPLY FORM：Antistatic tray,50 modules/tray
深圳浩時(shí)健電子有限公司是國內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動(dòng)通信基站、直放站、衛(wèi)星通信、有線電視、雷達(dá)、無線本地環(huán)等領(lǐng)域。積極向國內(nèi)生產(chǎn)和科研單位推薦新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場效應(yīng)三極管。多年以來已為國內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國家重要單位維修部門的生產(chǎn)、維修、研制開發(fā)新品、教學(xué)實(shí)驗(yàn)等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營運(yùn)作上,我公司批發(fā)、零售兼營，可向用戶長期保證貨源，并保證供貨品種的技術(shù)指標(biāo)滿足相關(guān)的國際檢測標(biāo)準(zhǔn)。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司長期經(jīng)營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證全新原裝，正品現(xiàn)貨，最新批號無鉛環(huán)保，假一罰十。深圳、香港公司備有大量現(xiàn)貨庫存，可提供樣品，現(xiàn)特價(jià)熱賣中。
特征
•增強(qiáng)型MOSFET晶體管IDD≅0@ VDD=12.5V, VGG=0V
•寬帶頻率范圍：330-400MHz
•低功耗控制電流IGG=1mA (typ)在VGG=3.5V
•模塊尺寸：30 x 10 x 5.4 mm
•線性操作有可能通過設(shè)置靜態(tài)漏電流同門電壓和輸出功率的控制輸入功率。
RA07H3340M： Silicon RF Power Semiconductors RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET TransistorsVDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• hT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANT
• RA07H3340M-101 is a RoHS compliance products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER：RA07H3340M-101
SUPPLY FORM：Antistatic tray,50 modules/tray
深圳浩時(shí)健電子有限公司是國內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動(dòng)通信基站、直放站、衛(wèi)星通信、有線電視、雷達(dá)、無線本地環(huán)等領(lǐng)域。積極向國內(nèi)生產(chǎn)和科研單位推薦新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場效應(yīng)三極管。多年以來已為國內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國家重要單位維修部門的生產(chǎn)、維修、研制開發(fā)新品、教學(xué)實(shí)驗(yàn)等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營運(yùn)作上,我公司批發(fā)、零售兼營，可向用戶長期保證貨源，并保證供貨品種的技術(shù)指標(biāo)滿足相關(guān)的國際檢測標(biāo)準(zhǔn)。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司長期經(jīng)營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證全新原裝，正品現(xiàn)貨，最新批號無鉛環(huán)保，假一罰十。深圳、香港公司備有大量現(xiàn)貨庫存，可提供樣品，現(xiàn)特價(jià)熱賣中。
